Fall 2016: ELEN E4301 Introduction to Semiconductor Devices
This course covers the physics of microelectronic semiconductor devices for silicon integrated circuit applications, with an emphasis on physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling will be outlined.
Topics: semiconductor fundamentals (including carrier statistics, generation & recombination, drift & diffusion, and carrier flow), pn junctions, metal-oxide-semiconductor (MOS) structures, metal-semiconductor junctions, and long- and short-channel metal-oxide-semiconductor field-effect transistors (MOSFETs)
Lecturer Prof. James Teherani
Northwest Corner Building, Room 1007
Office hours Mondays directly after class
TA Abhinandan Borah
Northwest Corner Building, Floor 10M
Office hours Thursdays from 2 to 3 pm, Mudd 1301 (see calendar for exact dates)
responsible for TA office hours, recitation
Course Assistant Damla Dimlioglu
responsible for homework grading and submission
Please use Piazza for questions:
Times Lecture, MW 10:10-11:25 am (545 Mudd)
TA Recitation, F 10:10-11:25 am (tentative, 545 Mudd)
Prerequisites ELEN E3106 (Solid-state devices and materials) or equivalent
[This course is self-contained and will review the material from E3106, but at a much deeper, graduate-level of understanding.]
Credit 3 points
Assignments There will be 10 homework assignments. See course calendar and Homework Policy below.
Exams Exam 1, October 10th from 10:10-11:25 am in 545 Mudd
Exam 2, November 14th from 10:10-11:25 am in 545 Mudd
Final Exam, December 19th from 9 to noon (tentative, TBA)
Exams will emphasize new content but also include previous material. All exams are open book, open notes, and a calculator is required.
Grading Homework 30%
Exam 1 20%
Exam 2 20%
Final Exam 30%
You are encouraged to collaborate with other students on homework assignments. However, these are not group projects to be divided among several participants. Every student must carry out every exercise in its entirety. Each exercise contains a substantial educational experience. If you collaborate with other students, please indicate the names of your collaborators at the top of your homework. Violations of this policy will be handled by Columbia’s Office of Judicial Affairs and Community Standards. If you have questions regarding this policy, please ask the instructor.
Assignments must be scanned and uploaded via Canvas by the due date. Maximum credit for late homework is given as follows: 85% for 1-day late, 70% for 2- days late, and 0% for greater-than-2-days late. Solutions will usually be posted 3 days after the homework due date.
Students are required to correct their homework submission using the posted solutions. The corrected assignment is due (via Canvas upload) by the next homework due date. The quality of the corrected submission determines 20% of each homework grade.
The lowest homework grade will be dropped.
Any exemptions to the policy require both TA and Professor approval.
- Integrated Microelectronic Devices: Physics and Modeling, by J. A. del Alamo (pre-publication). Available for purchase directly from the TA.
- Operation and Modeling of the MOS Transistor, 3nd ed., by Y. P. Tsividis and C. McAndrew, McGraw-Hill, 2010.
- Fundamentals of Modern VLSI Devices, 2nd ed., by Y. Taur and T. H. Ning, Cambridge University Press, 2009.
- Modern Semiconductor Devices for Integrated Circuits, by C. C. Hu, Prentice Hall, 2010.
- Solid State Electronics, 6th ed., by B. G. Streetman and S. Banerjee, Prentice-Hall, 2005.
The syllabus page shows a table-oriented view of the course schedule, and the basics of course grading. You can add any other comments, notes, or thoughts you have about the course structure, course policies or anything else.
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